发明名称 METHOD OF GROWING CARBON NANOTUBE AND CARBON NANOTUBE GROWING SYSTEM
摘要 <p>In the growing of carbon nanotubes, a substrate is delivered into a thermal CVD chamber whose internal temperature is room temperature, and a mixed gas consisting of an inert gas and a raw gas is introduced in the interior thereof. The pressure within the chamber is stabilized at 1 kPa, and thereafter the temperature within the chamber is raised to 510°C over a period of 1 min. As a result, without fusion bonding of catalyst particles, linear growth of carbon nanotube is initiated from each of the catalyst particles. Subsequently, the temperature and the atmosphere are maintained for about 30 min. Once the growth of carbon nanotubes starts, because the surfaces of the catalyst particles are covered by carbon, any fusion bonding of catalyst particles can be avoided even during the maintenance for about 30 min.</p>
申请公布号 WO2007074506(A1) 申请公布日期 2007.07.05
申请号 WO2005JP23799 申请日期 2005.12.26
申请人 FUJITSU LIMITED;KAWABATA, AKIO 发明人 KAWABATA, AKIO
分类号 C01B31/02 主分类号 C01B31/02
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