| 摘要 |
1,240,256. Semi-conductor device. ITT INDUSTRIES Inc. 20 Nov., 1969 [26 Nov., 1968], No. 56796/69. Heading H1K. A monolithic integrated circuit comprises a substrate 1 of one conductivity type, an epitaxial layer 4 of the opposite conductivity type, and a zone 5, within the layer 4, of the same conductivity type as the substrate, and in contact with the substrate. The method of construction includes diffusing into the substrate, except at contact area 2 to the zone, a heavily doped layer 3 of the opposite conductivity type, providing the epitaxial layer 4, and heating the device until the substrate impurity penetrates the layer 4 above the region 2 to a height suitable for contacting the subsequently diffused zone 5. The zone 5 may form a resistor, or the base of a transistor by a further diffusion of an emitter zone within the zone 5. Alternatively the resistor may be formed as a ring zone surrounding a core zone of the epitaxial layer, and be connected by an electrode to the core zone. The device is stated to reduce the number of surface contacts required, and to reduce overlaying connections. Antimony and boron may be used as dopants. |
