| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode of high emission luminance excellent in heat radiating property. <P>SOLUTION: The light emitting diode has: light emitting layers made of a compound semiconductor; first electrodes and second electrodes which are formed respectively on its main light extraction surfaces; and a transparent substrate joined to the opposite side to the surfaces whereon the electrodes are formed. Hereupon, when representing the area of its light extraction surfaces as (A), the area of its light emitting layers as (B), and the area of its backside as (C), the areas satisfy the relation of A>C>B. <P>COPYRIGHT: (C)2007,JPO&INPIT |
