| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor light-emitting element capable of forming a high-luminance nitride semiconductor light-emitting element without any deterioration without damaging a light emitting region, when forming a separation groove for separating chips and that for laser lift-off. <P>SOLUTION: A step A is formed at a region over an active layer 3 when viewed from a p-side in an n-type nitride semiconductor layer 2. One portion of the n-type nitride semiconductor layer 2, an active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5, and one portion of the upper side of the p electrode 5 are covered with a protective insulating film 6 up to a step A. A chip side is covered with the protective insulating film 6, thus preventing the active layer 3 or the like from being exposed to etching gas for a long time, when forming the separation groove for separating chips and for laser lift-off by etching. <P>COPYRIGHT: (C)2007,JPO&INPIT |
