| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for preventing an increase in the capacitance due to the etching stop films in a via hole and trench etching process using a damascene process and a method for manufacturing a semiconductor element for preventing an increase in the capacitance by forming the etching stop films by using materials having a high dielectric constant by a nitride film or inter-layer insulating films in the via hole and trench etching process using the damascene process. SOLUTION: This method for manufacturing the semiconductor device includes a step of forming etching stop films 102 and 104 made of materials having a low dielectric constant at the upper part of a semiconductor substrate 101 in which a predetermined structure is formed, and a step of forming interlayer dielectrics 103 and 105. This method also includes a step for etching the predetermined region of the inter-layer insulating films, and then for stopping the etching process at the etching stop films to form a damascene pattern. COPYRIGHT: (C)2007,JPO&INPIT
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