| 摘要 |
Disclosed is a system and method for automatically measuring carrier density distribution by using capacitance-voltage characteristics of a MOS transistor device. System comprises an automatic probe station for measurement of an object wafer, the automatic probe station being electrically connected to the wafer; a capacitor measuring unit having a high frequency terminal and a low frequency terminal; and a control computer for being respectively connected the automatic probe station and the capacitor measuring unit, wherein the high frequency terminal is connected to a gate of the wafer and the low frequency terminal is connected to a substrate of the wafer.
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