发明名称 |
Method of manufacturing NAND flash memory device |
摘要 |
A method of manufacturing a NAND flash memory device is disclosed. A semiconductor substrate of a portion in which a source select line SSL and a drain select line DSL will be formed is recessed selectively or entirely to a predetermined depth. Accordingly, the channel length of a gate can be increased and disturbance can be reduced. It is therefore possible to improve the reliability and yield of devices.
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申请公布号 |
US2007155098(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20060646956 |
申请日期 |
2006.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OM JAE CHUL;KIM NAM KYEONG |
分类号 |
H01L21/336;H01L29/78;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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