| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which is capable of suppressing line edge roughness. <P>SOLUTION: The manufacturing method of semiconductor device comprises a process for forming a resist film 3 on a substrate 1 to be worked; a process for exposing the resist film 3 by irradiating exposure light against the resist film 3 through a mask 6 arranged above the substrate 1 to be worked, and comprising a first line-shape pattern; and a process for forming a resist pattern by developing the resist film 3. The process for exposing the resist film 3 comprises a process for exposing the resist film 3 by a first amount of exposure not more than the optimum amount of exposure; and a process for exposing the resist film 3 by a second amount of exposure not more than the optimum amount of exposure, under a state that the positional relation between the mask 6 and the substrate 1 to be worked is deviated into the lengthwise direction of the first linear pattern. <P>COPYRIGHT: (C)2007,JPO&INPIT |
