| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element useful for a semiconductor laser, a semiconductor light emitting diode or the like, wherein a p-type dopant diffusion part including an active layer is configured by a crystal having few crystal defect and having a favorable crystallinity to prevent the diffusion of the p-type dopant to the active layer. <P>SOLUTION: The semiconductor light emitting element 1 includes: an n-GaInP layer 6; an n-AlGaInP clad layer 2; a un-MQW active layer 3; a un-AlGaInP clad layer 7a; a p-AlGaInP first clad layer 7b; a p-GaInP etch stop layer 8; a p-AlGaInP second clad layer 7c; a p-GaInP intermediate layer 9; a p-GaAs cap layer 10; or the like. In the semiconductor light emitting element 1, the ratio V/III of the surface layer 2a of the layer 2, the layer 3, the layer 7a, and the layer 7b is controlled to 300, and the ratio V/III of the other AlGaInP series layer is controlled to 150. <P>COPYRIGHT: (C)2007,JPO&INPIT |
