CARBIDE SINGLE CRYSTAL SUBSTRATE FOR GROWING SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a sodium-chloride type transition metal carbide single crystal substrate that increases lattice matching property with a (0001) or (000-1) plane of a nitride semiconductor crystal such as GaN and that allows epitaxial growth of a nitride semiconductor crystal with little defect. SOLUTION: The substrate for growing a nitride semiconductor consists of a sodium-chloride type transition metal carbide single crystal expressed by chemical formula of XC (wherein X represents one kind of Ti, Zr, Nb, Hf and Ta) or a sodium-chloride type transition metal carbide solid solution single crystal expressed by X(1-x)YxC (wherein each of X and Y represents one kind of Ti, V, Zr, Nb, Hf and Ta and x is in a range of 0