| 摘要 |
PROBLEM TO BE SOLVED: To provide a high definition liquid crystal display device operating at high speed by improving performance of thin film transistors without increasing intersection capacities between gate wiring and data wiring. SOLUTION: With respect to the liquid crystal display device, an insulating material having a low dielectric constant is dropped by an ink jet method to form an insulating film LDP on an upper layer of a gate insulating film GI disposed at intersections between gate wiring GL and data wiring DL formed on an active matrix substrate SUB1 constituting a liquid crystal display panel of the liquid crystal display device, whereby performance of thin film transistors built on a silicon semiconductor layer SI is improved without increasing intersection capacities at the intersections. COPYRIGHT: (C)2007,JPO&INPIT |
