发明名称 |
Method of forming device having a raised extension region |
摘要 |
A method is disclosed of forming an extension region for a transistor having a gate structure overlying a compound semiconductor layer. An anneal is used either before or after deep source/drain implantation to diffuse a dopant from a raised region adjacent the gate structure to a location underlying the gate structure. A non-diffusing activation process can be used to activate source/drain implants when the dopants from the raised region are diffused prior to deep source/drain implantation.
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申请公布号 |
US2007155073(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20060324510 |
申请日期 |
2006.01.03 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GOKTEPELI SINAN;FOISY MARK C. |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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