The invention relates to a device that comprises a memory circuit with memory cells that use floating gate storage transistors, which are conventionally called non-volatile memory cells. A particular embodiment relates to a teletext circuit. A teletext processing circuit comprising a decoder logic circuit and a memory circuit integrated together in an integrated circuit, the memory circuit comprising memory cells for storing teletext page data, the memory cells comprising floating gate storage transistors to store the teletext page data. The page data from memory is used to control the content of displayed teletext images.
申请公布号
WO2007039859(A3)
申请公布日期
2007.07.05
申请号
WO2006IB53569
申请日期
2006.09.29
申请人
NXP B.V.;VAN LAMMEREN, JOHANNES, P., M.;LIST, FRANS, J.;SOMBERG, JOHAN
发明人
VAN LAMMEREN, JOHANNES, P., M.;LIST, FRANS, J.;SOMBERG, JOHAN