发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR WRITING THRERIN
摘要 <p>A nonvolatile semiconductor storage device is provided with a resistance storage element (10) for storing a high resistance state and a low resistance state; a voltage generating circuit (12) for generating a write voltage for writing the high resistance state in the resistance storage element (10); a current generating circuit (14) for generating a write current for writing the low resistance state in the low resistance storage element; and a control circuit (16) for applying a write voltage to the resistance storage element (10) at the time of writing the high resistance state in the low resistance element (10) and applying a write current to the low resistance storage element (10) at the time of writing the low resistance state in the low resistance storage element (10).</p>
申请公布号 WO2007074504(A1) 申请公布日期 2007.07.05
申请号 WO2005JP23776 申请日期 2005.12.26
申请人 FUJITSU LIMITED;SATO, YOSHIHIRO 发明人 SATO, YOSHIHIRO
分类号 G11C13/00;H01L27/10 主分类号 G11C13/00
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