发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR WRITING THRERIN |
摘要 |
<p>A nonvolatile semiconductor storage device is provided with a resistance storage element (10) for storing a high resistance state and a low resistance state; a voltage generating circuit (12) for generating a write voltage for writing the high resistance state in the resistance storage element (10); a current generating circuit (14) for generating a write current for writing the low resistance state in the low resistance storage element; and a control circuit (16) for applying a write voltage to the resistance storage element (10) at the time of writing the high resistance state in the low resistance element (10) and applying a write current to the low resistance storage element (10) at the time of writing the low resistance state in the low resistance storage element (10).</p> |
申请公布号 |
WO2007074504(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
WO2005JP23776 |
申请日期 |
2005.12.26 |
申请人 |
FUJITSU LIMITED;SATO, YOSHIHIRO |
发明人 |
SATO, YOSHIHIRO |
分类号 |
G11C13/00;H01L27/10 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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