| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a two-dimensional photonic-crystal light emitting diode having a high light emission efficiency and energy efficiency. <P>SOLUTION: A p-type semiconductor clad layer 12, an active layer 11, and an n-type semiconductor clad layer 13 are stacked, and then holes 16 penetrating through these three layers are periodically formed to fabricate a two-dimensional photonic crystal. On the inner wall of the holes 16 inside the p-type semiconductor clad layer 12 and the n-type semiconductor clad layer 13, an oxidized region 17 is formed. Holes (electrons) injected from an electrode flow into the p (n)-type semiconductor clad layer 12 (13) bypassing the oxidized region 17, and enter the active layer at a place sufficiently removed from the inner wall of the holes 16, and there the holes and electrons recombine and emit light. Consequently, generation of heat (surface recombination) instead of light, due to recombination of the holes and electrons near the inner wall of the holes 16 can be suppressed and thereby the light emission efficiency and energy efficiency can be improved. <P>COPYRIGHT: (C)2007,JPO&INPIT |
