摘要 |
A semiconductor laser having an optical volume of between about 0.1xlambda<SUP>3 </SUP>to about 30xlambda<SUP>3</SUP>, where lambda is the wavelength of light emitted by the semiconductor laser. The semiconductor laser comprises an optical cavity having a proximal and distal end; a first reflector disposed at the proximal end; a second reflector disposed at the distal end, said optical cavity being defined by the first and second reflectors; an active region disposed transversely with respect to the optical cavity, wherein the semiconductor laser produces an axial emission of light from the distal end of the optical cavity.
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