| 摘要 |
A device ( 101 ) for controlling the treatment of a substrate ( 102 ) with a plasma ( 103 ) is provided which comprises (a) a plasma chamber ( 104 ) adapted to generate a plasma ( 103 ); (b) a sensor ( 113 ) equipped with first ( 115 ) and second ( 117 ) electrodes that are exposed to the plasma generated within the chamber, said sensor being adapted to (i) apply a first low frequency voltage V<SUB>1 </SUB>to the first electrode, (ii) apply a plurality of high frequency voltages V<SUB>2 </SUB>. . . V<SUB>n </SUB>to the first electrode, where n>=2, and (iii) measure the respective currents I<SUB>1 </SUB>. . . I<SUB>n </SUB>flowing through the second electrode during application of each of the voltages V<SUB>1 </SUB>. . . V<SUB>n</SUB>, respectively; and (c) a data processing device ( 121 ) adapted to determine the densities of a plurality of ion species based on currents I<SUB>1 </SUB>. . . I<SUB>n </SUB>and on a mathematical model or on calibration data relating to the plasma chamber.
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