LOW TEMPERATURE DOPED SILICON LAYER FORMATION

摘要

A doped silicon layer is formed in a batch process chamber 529 at low temperatures. The silicon precursor 580 for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor 582 is an n-type dopant, such as phosphine. The silicon precursor 580 can be flowed into the process chamber 529 with the flow of the dopant precursor 582 or separately from the flow of the dopant precursor 582. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.