| 摘要 |
The invention relates to a method of reducing excess noise in electronic devices. The invention involves the use of a thermodynamic screen which is disposed beneath the electronic devices in order to block transverse currents between said devices and the subjacent layers, which are responsible for excess noise. For epitaxial layers, such as those used in microelectronics, the doping barrier layer (2) opposite the epilayer (4) supporting the devices and the non-doped separating layer (3) form the thermodynamic screen which, located between the epilayer (4) and the substrate (1), reduces the above-mentioned transverse currents and, in this way, reduces excess noise from the devices on the epilayer (4) when polarised. The connection between the ohmic contact (7) of the screen layer (2) and the output (6) from the FET transistors of the epilayer (4) (line connection) or the port (5) thereof eliminates the thermal noise from the capacitor located beneath the FET transistors and, consequently, the corresponding excess noise in the devices.
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