| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which a bonding leak defect can be suppressed. SOLUTION: A gate electrode 34 is formed on a front face of a semiconductor substrate 10, and a side wall insulation film 41 is formed on a side wall of the gate electrode 34. A metal film is deposited on the semiconductor substrate 10 so as to cover the gate electrode 34 and the side wall insulation film 41, the semiconductor device 10 is placed in atmospheric gases, the metal film is heated by heat conduction of atmospheric gases from front and rear faces of the semiconductor substrate 10, respectively, thereby forming a metal silicide film. COPYRIGHT: (C)2007,JPO&INPIT
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