| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-performance semiconductor device with a simple gettering process at low temperatures, and to provide the semiconductor device and a display unit can be obtained with the use of it. SOLUTION: The method for manufacturing the semiconductor device having a structure with a crystalline semiconductor layer with a catalitic element added, a gate insulating film, and a gate electrode laminated on an insulating substrate in this order includes a light irradiating process for irradiating the light that passes through the crystalline semiconductor layer and is absorbed by the gate electrode to the gate electrode. COPYRIGHT: (C)2007,JPO&INPIT
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