| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory capable of reducing a required amount of current for inverting magnetization. SOLUTION: The threshold of a write current required for spin injection magnetization inversion when there is no magnetic field assistance is 5×10<SP>7</SP>A/cm<SP>2</SP>. However, when the magnetic field assistance is used simultaneously with spin injection, the threshold of the write current required for spin injection magnetization inversion becomes 2.5×10<SP>7</SP>A/cm<SP>2</SP>. Further, when a magnetic yoke is used, the threshold of the write current required for spin injection magnetization inversion becomes 5×10<SP>6</SP>A/cm<SP>2</SP>. More specifically, the level of the write current of the magnetic memory in the spin injection magnetization inversion type using the magnetic yoke and the magnetic field assistance can be reduced to 1/10 of the write current when there is no magnetic field assistance, and 1/5 of the write current when there is the magnetic field assistance but there is no magnetic yoke. COPYRIGHT: (C)2007,JPO&INPIT
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