发明名称 Method of forming nitrogen-doped single-walled carbon nanotubes
摘要 A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an H<SUB>2</SUB>O or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the H<SUB>2</SUB>O or other plasma atmosphere.
申请公布号 US2007157348(A1) 申请公布日期 2007.07.05
申请号 US20060447948 申请日期 2006.06.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAE EUN-JU;MIN YO-SEP;PARK WAN-JUN
分类号 C01B31/00 主分类号 C01B31/00
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