发明名称 |
Method of forming nitrogen-doped single-walled carbon nanotubes |
摘要 |
A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an H<SUB>2</SUB>O or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the H<SUB>2</SUB>O or other plasma atmosphere.
|
申请公布号 |
US2007157348(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20060447948 |
申请日期 |
2006.06.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE EUN-JU;MIN YO-SEP;PARK WAN-JUN |
分类号 |
C01B31/00 |
主分类号 |
C01B31/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|