发明名称 |
INTERNAL REFERENCE VOLTAGE GENERATING CIRCUIT FOR REDUCING STANDBY CURRENT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME |
摘要 |
An internal reference voltage generating circuit that reduces a standby current and the number of pins of a semiconductor memory device, in which a reference voltage is provided to an input buffer that receives a signal through an input to which an on die transmitor resistor is connected, includes, a voltage dividing circuit outputting the reference voltage by a power voltage; a pull down driver connected to an end of the voltage dividing circuit; and a calibration control circuit comparing a voltage level of the input and a voltage level of an end of the voltage dividing circuits and controlling the on resistor value of the pull down driver according to a result of the comparison. The internal reference voltage generating circuit is operated white the memory controller inputs a signal into a mode register set (MRS) to enable the internal reference voltage generating circuit and the output signal of the MRS is activated.
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申请公布号 |
US2007153590(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20060567826 |
申请日期 |
2006.12.07 |
申请人 |
SEO YOUNG-HUN;SEO DONG-IL;LEE KYU-CHAN;CHOI JONG-HYUN |
发明人 |
SEO YOUNG-HUN;SEO DONG-IL;LEE KYU-CHAN;CHOI JONG-HYUN |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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