METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT USING A SACRIFICIAL MASKING STRUCTURE

摘要

A method for manufacturing a semiconductor component (10) using a sacrificial masking structure (50). A semiconductor device is formed from a semiconductor substrate (12) and a layer of dielectric material (40) is formed over the semiconductor substrate (40) and the semiconductor device. The layer of dielectric material (40) may be formed directly on the semiconductor substrate (12) or spaced apart from the semiconductor substrate (12) by an interlayer. Posts or protrusions (50) having sidewalls are formed from the layer of dielectric material (40). An electrically insulating material (52) that is preferably different from the layer of dielectric material (40) is formed adjacent the sidewalls of the posts (50). The electrically insulating material (52) is planarized and the posts (50) are removed to form openings that may expose a portion of the semiconductor device or a portion of the interlayer material. An electrically conductive material is formed in the openings.