发明名称 SILICON NITRIDE SINTERED COMPACT, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING UNIT AND MEMBER FOR LIQUID CRYSTAL MANUFACTURING UNIT USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a silicon nitride sintered compact having a practically large mechanical strength and a small coefficient of thermal expansion, and small grinding resistance. <P>SOLUTION: This silicon nitride sintered compact is mainly composed of &beta;-Si<SB>3</SB>N<SB>4</SB>, and it contains 5-30 vol% Si<SB>2</SB>N<SB>2</SB>O (silicon oxynitride) and 1-10 vol% &beta;-RE<SB>2</SB>Si<SB>2</SB>O<SB>7</SB>(RE is an element in the group III of the periodical table). The sintered compact keeps a strong mechanical strength due to a composition composed mainly of &beta;-Si<SB>3</SB>N<SB>4</SB>, and has a small grinding resistance due to a composition having 5-30 vol% Si<SB>2</SB>N<SB>2</SB>O and also has a small coefficient of thermal expansion of the grain boundary layer and a small residual stress in the sintered compact due to a composition having the range of 1-10 vol% &beta;-RE<SB>2</SB>Si<SB>2</SB>O<SB>7</SB>, and further the sintered compact exhibits excellent processability allowing a smooth grinding process and the working of high dimensional accuracy due to its small grinding force. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007169118(A) 申请公布日期 2007.07.05
申请号 JP20050370703 申请日期 2005.12.22
申请人 KYOCERA CORP 发明人 KAYAMA TEPPEI;ODA TAKEHIRO;OSHIMA KAZUYOSHI;TAKIGAWA KAZUAKI
分类号 C04B35/584;H01L21/683 主分类号 C04B35/584
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