| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a data erasing method and a method of manufacturing a non-volatile semiconductor memory capable of improving productivity without deteriorating the disturb characteristics. <P>SOLUTION: A wafer having a plurality of built-in memory cells 1 is prepared. Each of the memory cells has a gate electrode 15 formed on a semiconductor substrate 11, charge storages 18 formed on both sides of the gate electrode 15, respectively, low concentration diffusion regions 16 formed above the semiconductor substrate 11 and under the charge storages 18, respectively, and high concentration diffusion regions 17 formed in a pair of regions sandwiching the region under the gate electrode 15 and the low concentration diffusion regions 16, respectively. Then, after the all data held in the charge storages 18 of all memory cells 1 formed in the wafer are electrically erased (electrical erasing (2)), the wafer is left for a predetermined time at a high temperature (bake erasing (3)). <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
