| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing an area, and to provide a data reading method therefor. <P>SOLUTION: The semiconductor memory device is provided with: a memory array 10 in which memory cells are arranged in a matrix form; a bit line for connecting the memory cells in a same column in common; a pre-charge circuit 61 for applying a pre-charge potential to the bit line in reading the data; and a first sense amplifier 51 for amplifying the data read out to the bit line. The first sense amplifier 51 discriminates the data read out in the bit line by using the pre-charge potential applied to the bit line by the pre-charge circuit 61 as a reference potential. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
