| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve a problem that when a property of a reference side in differential type read determination operation is achieved by a memory cell (reference cell) in a memory apparatus of a virtual ground system, a leak current through a cell being adjacent to the reference cell is dispersed by the process, thereby, stable read becomes hard. <P>SOLUTION: A bit line potential selecting means for applying a write-in potential to the bit line of an electric charges accumulating side and applying a ground potential to the bit line of the other side is provided on a memory cell being adjacent to the reference cell. Since a leak current to the adjacent cell from the reference cell is prevented by performing write-in operation for the adjacent cell using this constitution, the original property of the reference cell can be reflected to read-out operation as the property of the reference side, and stable read can be achieved. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
