| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the on-resistance is reduced while keeping a withstanding voltage. SOLUTION: The semiconductor device includes: a first semiconductor layer 21 in a first conduction type; a second semiconductor layer 22 in a second conduction type formed on the first semiconductor layer; a third semiconductor layer 23 in the first conduction type formed in the second semiconductor layer; a trench 24 in a depth from a surface of the third semiconductor layer 23 to at least the first semiconductor layer through the third semiconductor layer; a first insulating film 25 formed on a sidewall and a bottom of the trench; and a first electrode 26 that is formed on the first insulating film in the trench, and electrically isolated from the first to third semiconductor layers; wherein a profile of impurity concentration of the second semiconductor layer at a position where a channel is formed along the sidewall of the trench has a first peak near an interface between the third semiconductor layer and the second semiconductor layer, and a second peak near an interface between the second semiconductor layer and the first semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT
|
