发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT USING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can obtain a reflection type liquid crystal display device having a pixel structure capable of realizing high aperture ratio without increasing the number of masks and the number of steps. SOLUTION: The method of manufacturing the semiconductor device has steps of forming a semiconductor layer on a substrate, forming a gate insulation film on the semiconductor layer, and forming a source wiring on the gate insulation film. The source wiring is formed by etching a conductive film using a induction coupling type plasma, and the source wiring has a tapered shape. The semiconductor layer is made of a crystalline semiconductor film. The etching is executed using a mixed gas of CF<SB>4</SB>and Cl<SB>2</SB>. The method has a process of forming an interlayer insulation film on the source wiring. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007173850(A) |
申请公布日期 |
2007.07.05 |
申请号 |
JP20070000530 |
申请日期 |
2007.01.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
H01L29/786;G02F1/1368;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/336;H01L23/52 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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