| 摘要 |
PROBLEM TO BE SOLVED: To improve threshold controllability through a backgate electrode and reduce parasitic capacitance between the backgate electrode and a source/drain layer. SOLUTION: A grove 36 is formed that exposes a semiconductor substrate 31, and thereafter part of semiconductor layers 51 and 52, which are disposed under semiconductor layers 33 and 35, respectively, is removed. Voids 60a and 60b are formed that expose the upper and lower surfaces of the ends of the semiconductor layers 33 and 35 from the semiconductor layers 51 and 52, respectively. A support body 56 is embedded in the grooves 36 and 37 to wrap around into the under parts of the semiconductor layers 33 and 35 along the sides of the semiconductor layers 33 and 35, respectively, to form a hollow part 57a between the semiconductor substrate 31 and the semiconductor layer 33. A hollow part 57b is formed between the semiconductor layers 33 and 35, and thereafter an embedded insulating layer 39 is formed that is embedded into the hollow parts 57a and 57b. COPYRIGHT: (C)2007,JPO&INPIT
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