Method of manufacture for a component including at least one single-crystal layer on a substrate

摘要

The invention refers to a method of manufacture for a component including a single-crystal substrate on which is deposed at least one single-crystal layer, the method including one or several steps for single-crystal layers' deposit by pulverisation of a metal or of semi-conductors inside a plasma of gas, and the method being characterised in that the rate of atom deposit is lower than the homogenisation rate of such atoms among themselves.