| 摘要 |
A semiconductor device features connecting gate patterns of all transistors to a N+ or +P junction by the first connected wiring layer to prevent degradation of characteristics of the semiconductor device which results from plasma damages during a process. In order to connect a junction to a gate layer weak to plasma damages, the gate layer is connected to the N+ or P+ junction when a first wiring layer after a transistor is formed. As a result, when the gate layer is charged up by plasma damages, the gate layer is discharged by the junction or provided to receive (-) ions or electrons so that a gate oxide is not affected by plasma damages.
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