| 摘要 |
A semiconductor device is provided. The semiconductor device according to the present invention includes a semiconductor substrate, a second insulation layer, a buffer insulation layer adjacent to the second insulation layer, a third insulation layer and transistors. A high voltage device region and a low voltage device region are defined in the semiconductor substrate. The second and third insulation layers are formed in the high and low voltage device regions, respectively. The transistors are formed on the second and third insulation layers, respectively.
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