| 摘要 |
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a memory material and a first tapered contact adjacent to the memory material. The phase change memory may further include a second tapered contact separated from the first tapered contact and adjacent to the memory material, wherein the first and second tapered contacts are adapted to provide a signal to the memory material.
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