发明名称 Semiconductor devices
摘要 A CMOS circuit in low-voltage implementation, low power-consumption implementation, high-speed implementation, or small-size implementation. In a circuit which uses a FD-SOI MOST where a back gate is controlled by a well, voltage amplitude at the well is made larger than input-voltage amplitude at the gate. Alternatively, the circuit is modified into a circuit which uses a MOST that changes dynamically into an enhancement mode and a depletion mode.
申请公布号 US2007152736(A1) 申请公布日期 2007.07.05
申请号 US20070714844 申请日期 2007.03.07
申请人 HITACHI, LTD. 发明人 ITOH KIYOO;TSUCHIYA RYUTA;KAWAHARA TAKAYUKI
分类号 H03K3/01 主分类号 H03K3/01
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