SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THEREOF, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an method of evaluating a semiconductor device in which impurity distribution under the gate can be evaluated stably without damaging a silicon substrate.

SOLUTION: According to the method of evaluating the semiconductor device, a gate electrode made of a silicon-containing material is removed without removing a gate insulating film by contacting pyrolysis hydrogen generated by pyrolysis to the semiconductor device that includes: the gate electrode made of a silicon-containing material, which is arranged on a semiconductor substrate through a gate insulating film; and a source electrode and a drain electrode formed on the semiconductor substrate while sandwiching the gate electrode. Further, a processed form of the gate is evaluated by observing a form of the gate insulating film that remains on the semiconductor substrate. The gate insulating film that remains on the semiconductor substrate is removed by a wet process, and the impurities distribution under the gate is measured and evaluated.

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