| 摘要 |
Disclosed are a metal interconnection of a semiconductor device and a method of fabricating the same. The metal interconnection includes an interlayer dielectric layer formed having a trench on a semiconductor layer, a first TaN layer formed at an inner wall of the trench, a second TaN layer formed on the first TaN layer, and a conductive material filling the trench, wherein TaN of the first TaN layer has a grain size smaller than a grain size of TaN of the second TaN layer.
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