摘要 |
Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector (112), an intrinsic base (118) above the collector, shallow trench isolation regions (114) adjacent the collector, a raised extrinsic base (202) above the intrinsic base, a T-shaped emitter (800) above the extrinsic base, spacers (700) adjacent the emitter, and a silicide (400) layer that is separated from the emitter by the spacers. |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GEISS, PETER, J.;JOSEPH, ALVIN, J.;LIU, QZHI;ORNER, BRADLEY, A. |
发明人 |
GEISS, PETER, J.;JOSEPH, ALVIN, J.;LIU, QZHI;ORNER, BRADLEY, A. |