GAN TYPE LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A GaN type light emitting diode device and a method for manufacturing the same are provided to simplify a manufacturing process and improve a yield by forming simultaneously a transparent electrode and a protective layer without performing an etch process. An n type GaN layer(111) is formed on a substrate(100). An active layer(113) is formed on a predetermined region of the n type GaN layer. A p type GaN layer(115) is formed on the active layer. A transparent electrode(120) is formed on the p type GaN layer. A p type electrode(140) is formed on the transparent electrode. An n type electrode(130) is formed on the n type GaN layer on which the active layer is not formed. A protective layer(150) is formed on a resultant structure between the transparent electrode and the n type GaN layer. The protective layer is formed with a plasma-oxidized transparent layer.