| 摘要 |
A CMOS image sensor includes a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide, a multi-layered metal interconnection formed over the pixel regions of the front of the substrate, a bump connected to an uppermost metal interconnection of the multi-layered metal interconnection, a plurality of trenches formed in a backside of the substrate, wherein the trenches have different depths for each wavelength of light, and correspond to the respective pixel regions, and a glass covering the backside of the substrate.
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