OPTICAL SEMICONDUCTOR ELEMENT, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide an optical semiconductor element wherein an n-type semiconductor layer having a good crystallinity can be formed while suppressing the degradation of In-contained active layers such as a light receiving layer and a light emission layer.

SOLUTION: This semiconductor laser element (optical semiconductor element) comprises a p-type carrier block layer 109 which essentially contains no In, an In-contained active layer 107c which is formed on the Ga polarity plane (group III polarity plane) of the p-type carrier block layer 109, and an n-type clad layer 106 which is formed on the surface of the In-contained active layer 107c and has a smaller mole fraction for In than the active layer 107c.

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