发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device whereby a photoresist cured in a semiconductor manufacturing step can easily be exfoliated more easily than prior arts without giving an adverse effect on the reliability of the semiconductor device. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a photoresist film 20 on a support substrate 10 or a structure formed on the support substrate 10; applying patterning to the photoresist film; injecting a substance by using the photoresist film for a mask, or applying dry etching processing to the photoresist film; exposing the photoresist film for an organic solvent for swelling or dissolving the photoresist film; and impregnating the photoresist film into a chemical including sulfuric acid to remove the photoresist film. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007173730(A) 申请公布日期 2007.07.05
申请号 JP20050372655 申请日期 2005.12.26
申请人 TOSHIBA CORP 发明人 YAMADA KOREI;MIYAZAKI KUNIHIRO;TOMITA HIROSHI
分类号 H01L21/027;G03F7/42;H01L21/304 主分类号 H01L21/027
代理机构 代理人
主权项
地址