| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device assuring a lower ON resistance (R<SB>ON</SB>) and a higher OFF withstand voltage. SOLUTION: The ON resistance (R<SB>ON</SB>) of an element is maintained small and withstand voltage thereof is maintained higher by giving a distortion characteristic to lower the threshold voltage to an insulating film formed between source and gate electrodes, and also giving a distortion characteristic to raise the threshold voltage to an insulating film 7 formed between drain and gate electrodes. COPYRIGHT: (C)2007,JPO&INPIT
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