| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in resistance due to alloying a lower wiring electrode of Al metal and an upper wiring electrode of Au, at a wiring connection of a semiconductor device. SOLUTION: A first conductive peeling preventing film 21 and a barrier metal layer 23 are formed on the flat upper side surface of a lower wiring electrode 13 before an interlayer insulating film 25 is formed. As a result, the first conductive peeling preventing film and the barrier metal layer do not become a thin layer to be formed in uniform film thickness. So, the function of the barrier metal layer is effectively brought out that separates the lower wiring electrode from the upper wiring electrode 31. COPYRIGHT: (C)2007,JPO&INPIT
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