| 摘要 |
PROBLEM TO BE SOLVED: To deposit a platinum thin film on a silicon oxide layer so that the thin film is hardly exfoliated, has excellent flatness, and is oriented in the <111> direction. SOLUTION: A silicon substrate 101 comprising single crystal silicon having a main surface of the (100) plane is prepared, and a silicon oxide layer 102 is deposited on the main surface of the silicon substrate 101. For example, the silicon oxide layer 102 can be deposited by a thermal oxidation method. Alternatively, the silicon oxide layer 102 can be deposited by a CVD (Chemical Vapor Deposition method). Then, the platinum thin film 104 having a thickness of about 150-200 nm is deposited on the silicon oxide layer 102 through a transition layer 103 by an ECR sputtering method in which a platinum target is used and oxygen gas is introduced. COPYRIGHT: (C)2007,JPO&INPIT
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