| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which uneven surface levels are prevented from being partially formed depending on the location of the device isolation film between neighboring active regions, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device comprises: a substrate in which field regions and active regions are defined; device isolation films 44A formed on the field regions; prevention films 45 formed on the device isolation films 44A; and gate lines 46 formed on the substrate to traverse the field regions and active regions. The semiconductor manufacturing method comprises: a first step of forming device isolation films 44A on predetermined regions of the semiconductor substrate to define the field regions and active regions; a second step of forming prevention films 45 on the device isolation films 44A; and a third step of forming gate lines 46 on the semiconductor substrate to traverse the field regions and the active regions. COPYRIGHT: (C)2007,JPO&INPIT
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