| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compact semiconductor device which incorporates a resistive element without a decline in productivity. <P>SOLUTION: A photosensitive layer 21 is formed on a substrate 121 having a first conductive layer 20a of a high resistance, and a second conductive layer 20b of a low resistance. Then the first conductive layer and the second conductive layer in a non-interconnection region are removed by etching while leaving the photosensitive layer 21b in an interconnection region. After removing the photosensitive layer remaining in a resistive element R formation region, the second conductive layer 20b is removed by etching, thus fabricating the resistive element. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
