SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR HAVING SILICON CARBIDE PASSIVATION LAYER ON BASE REGION AND METHOD OF FABRICATING THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a bipolar junction transistor (BJT) comprising a silicon carbide (SiC) collector layer of first conductivity type an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. SOLUTION: In this bipolar junction transistor, an epitaxial silicon carbide passivation layer 350 of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer 320 outside the silicon carbide emitter mesa. In addition, the epitaxial silicon carbide passivation layer can be configured to deplete fully at zero device bias. COPYRIGHT: (C)2007,JPO&INPIT